Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection
نویسندگان
چکیده
منابع مشابه
Room Temperature Operation of Gasb‐based Resonant Tunneling Diodes by Prewell Injection
We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4973894